Si substrate

| Si PCB | ||||||||
| Outside diameter | 1” | 2” | 3” | 4” | 5” | 6” | 8” | 12” |
| Crystal growth method | CZ | |||||||
| Diameter/Tolerance | 25.4±0.3 | 50.8±0.3 | 76.2±0.3 | 100±0.3 | 125±0.4 | 150±0.4 | 200±0.4 | 300±0.4 |
| Doping | NType, P型 | |||||||
| ORITENTION | 100/111/110 | |||||||
| Resistance ratioOHM-CM | <0.0015 , 0.001-0.005 , 0.01-0.05 , 0.1-0.9 , 1-10 , 10-50 | |||||||
| Thickness µm | 50-10000 | |||||||
| Levelness | <3 µm | |||||||
| RoughnessRa | <0.5 NM | |||||||
| Bending degree | <20µm | |||||||
| Curvature | <20µm | |||||||
| Packaging method | 10Episode, 25片 | |||||||
