Si substrate

Si PCB
Outside diameter1”2”3”4”5”6”8”12”
Crystal growth methodCZ
Diameter/Tolerance25.4±0.350.8±0.376.2±0.3100±0.3125±0.4150±0.4200±0.4300±0.4
DopingNType, P型
ORITENTION100/111/110
Resistance ratioOHM-CM<0.0015 , 0.001-0.005 , 0.01-0.05 , 0.1-0.9 , 1-10 , 10-50
Thickness µm50-10000
Levelness<3 µm
RoughnessRa<0.5 NM
Bending degree<20µm
Curvature<20µm
Packaging method10Episode, 25片