| SiC 基板 | ||||
| Specification | 4” N-type 4H SiC | 6” N-type 4H SiC | ||
| Grade | Production | Research | Production | Research |
| Diameter | 100.0 mm +/- 0.5 mm | 150.0 mm±0.25 mm | ||
| Thickness | 350 um +/- 25 um | 350.0 μm ± 25.0 μm | ||
| Surface Orientation | 4.0 deg toward <11-20> +/-0.5 deg | 4 ˚toward<11-20>± 0.5˚ | ||
| Micropipe Density (MPD) | ≤0.1/ cm2 , | ≤1 / cm2 | ≤0.1/ cm2 | ≤1 / cm2 |
| Resistivity | 0.015-0.025 Ω•cm | 0.015-0.025 Ω•cm | ||
| Primary Flat Orientation | <11-20> ± 5.0˚ | <11-20> ± 5.0˚ | ||
| Secondary Flat Orientation | 90.0˚ CW from primary ± 5.0˚, silicon face up | None | ||
| Primary Flat Length | 32.5 mm ± 2.0 mm | 47.5 mm ± 2.0 mm | ||
| Secondary Flat Length | 18.0 mm ± 2.0 mm | None | ||
| Surface Finish | Double side polish, Si epi-face CMP, C face optical polish | Double side polish, Si epi-face CMP, C face optical polish | ||
| Surface Roughness | CMP Si Face Ra≤0.15 nm | CMP Si Face Ra≤0.15 nm | ||